Electrical and Optical Studies in Ge100-xSxChalcogenide Thin Films
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منابع مشابه
Structural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
متن کاملStructural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
متن کاملstructural, electrical and optical properties of molybdenum oxide thin films prepared by post-annealing of mo thin films
molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using dc magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°c) with flow oxygen at 200 sccm (standard cubic centimeter per minute). the crystallographic structure of the films was obtained by means of x-ray diffraction (xrd) analysis. an atomic force micr...
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Cu2ZnSnSe4 thin films were synthesised by selenisation of magnetron sputtered metal precursors. The band gap determined from the absorption spectra increases from 1.01 eV at 300 K to 1.05 eV at 4.2 K. In lower quality films photoluminescence spectra show a broad, low intensity asymmetric band associated with recombination of free electrons and holes localised on acceptors in the presence of spa...
متن کاملOptical and Electrical Properties of Copper Telluride Thin Films
Copper Telluride (CuTe) thin films have been successfully deposited on a glass substrate Fluorine Tin oxide (FTO) by electrodeposition technique. The absorbance was measured using M501 UV-visible spectrophotometer in the wavelength range of 200-900nm. Copper Telluride (CuTe) thin films were investigated at room temperature. Optical absorption study showed that CuTe films were of indirect band g...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2001
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.99.683